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Characterization of electronic structure of periodically ...

@article{osti_1263395, title = {Characterization of electronic structure of periodically strained graphene}, author = {Aslani, Marjan and Garner, C. Michael and Kumar, Suhas and Nordlund, Dennis and Pianetta, Piero and Nishi, Yoshio}, abstractNote = {We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with ...

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Layer-Resolved Graphene Transfer via Engineered …

Graphene offers great potential for high-performance electrical and optical devices such as radio-frequency transistors, high-speed photodetectors, and optical modulators (1–5).The most common approach used to build graphene devices is to grow the polycrystalline graphene via chemical vapor deposition on a thin metal foil, followed by transfer of the graphene to the substrate of interest (6, 7).

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Gap generation and phase diagram in strained …

The gap equation for Dirac quasiparticles in monolayer graphene in constant magnetic and pseudomagnetic fields, where the latter is due to strain, is studied in a low-energy effective model with contact interactions.

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Casimir interaction of strained graphene - INSPIRE

Van der Waals forces and electron-electron interactions in two strained graphene layers. Anand Sharma, Peter Harnish, Alexander Sylvester, Valeri N. Kotov, A.H. Castro Neto. Phys.Rev.B 89 (2014) 23, 235425 • e-Print: 1402.3369 • DOI: 10.1103/PhysRevB.89.235425 [6] Casimir interactions in strained graphene …

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Revisiting the gauge fields of strained graphene

We show that when graphene is only subject to strain, the spin connection gauge field that arises plays no measurable role, but when intrinsic curvature is present and strain is small, spin connection dictates most of the physics. We do so by showing that the Weyl field associated with strain is a pure gauge field and no constraint on the ($2+1$)-dimensional spacetime appears.

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Revisiting the gauge fields of strained graphene

We show that when graphene is only subject to strain, the spin connection gauge field that arises plays no measurable role, but when intrinsic curvature is present and strain is small, spin connection dictates most of the physics. We do so by showing that the Weyl field associated with strain is a pure gauge field and no constraint on the ($2+1$)-dimensional spacetime appears.

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Strained Graphene Structures: From Valleytronics to ...

Masir MR, Moldovan D, Peeters FM (2013) Pseudo magnetic field in strained graphene: Revisited Solid State Commun 76:175–176 Google Scholar 25. Settnes M, Power SR, Jauho A-P (2016) Pseudomagnetic fields and triaxial strain in graphene Phys Rev B 93:035456 Google Scholar

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Phys. Rev. Lett. 106, 176802 (2011) - Valley …

(a) Energy dispersion of a strained graphene ribbon with width N = 140 (in units of honeycombs) . Lateral strains are applied on the ribbon except the middle part as shown in Fig. 1. K 0 is a reciprocal lattice vector. (b) A blowup of the box region in panel (a).

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Strained graphene as a local probe for …

Strained graphene as a local probe for plasmon‐enhanced Raman scattering by gold nanostructures. Sebastian Heeg. Corresponding Author. E-mail address: sebastian.heeg@physik.fu‐berlin.de. Department of Physics, Freie Universität Berlin, 14195 Berlin, Germany.

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Strained graphene as a local probe for …

Strained graphene as a local probe for plasmon‐enhanced Raman scattering by gold nanostructures. Sebastian Heeg. Corresponding Author. E-mail address: sebastian.heeg@physik.fu‐berlin.de. Department of Physics, Freie Universität Berlin, 14195 Berlin, Germany.

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Band structure engineering of graphene by strain: First ...

We have investigated the electronic structure of graphene under different planar strain distributions using the first-principles pseudopotential plane-wave method and the tight-binding approach. We found that graphene with a symmetrical strain distribution is always a zero band-gap semiconductor and its pseudogap decreases linearly with the strain strength in the elastic regime.

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Strain engineering of 2-D semiconductor and graphene

Then, the band structure changes of strained 2-D semiconductors (TMDCs) and strained graphene are discussed, while the optical responses observed under different kinds of strain fields are reviewed.

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Strain engineering of 2D semiconductor and …

Then, the band structure changes of strained 2D semiconductors (TMDCs) and strained graphene are discussed, while the optical responses observed under different kinds of strain fields are reviewed. Subsequently, this paper summarizes the strain engineering techniques that can apply different kinds of strains to specific 2D materials.

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Phonon softening and crystallographic orientation of ...

Following the standard procedure (see SI Text), we can write the secular equation for the G band of strained graphene as where λ ≡ ω 2 − ω 0 2 is the difference between the square of the perturbed and unperturbed phonon frequencies, A and B are the phonon deformation potential coefficients, and ε ij is the strain tensor. Because second ...